( 1 ) Relation between emitter current, base current and collector current
IE = IB + IC
Where IE = Emitter
current
IB = Base current
IC =
Collector current
( 2 ) The emitter is
heavily doped, base is lightly doped and collector is moderately doped.
( 3 ) Configuration of Transistor :
- Common Base ( CB )
- Common Emitter ( CE ) and
- Common Collector ( CC )
( 4 ) Common Base
Configuration
Current amplification
factor
α = dIC / dIE
, VCB Constant
Where
dIC = Change in collector
current
dIE = Change in emitter
current
Collector current
IC = αIE +
ILeakage
IC = αIE +
ICBO
= α / ( 1 – α ) IB
+ ICBO / ( 1 – α )
= βIB + ICBO
/ ( 1 – α )
Therefore β = α / ( 1 – α
)
Where ICBO =
Collector – base current with emitter open
β = Current amplification
factor for common emitter
configuration
Input resistance ( ri
)
ri = dVBE
/ dIE at constant VCB
Output resistance ( ro
)
ro = dVCB
/ dIB
( 5 ) Common Emitter Configuration
Current amplification
factor
β = dIC / dIB
Where dIC = Change
in collector current
dIB =
Change in base current
Collector current
IC = βIB
+ ICEO
Where
β = α / ( 1 – α )
ICEO = Collector current
flows when base is open circuited
Relation between ICEO
and ICBO
ICEO = 1 / ( 1 – α )
ICBO
Input resistance ( ri
)
ri = dVBE /
dIB at constant VCE
Output resistance ( ro
)
ro = dVCE /
dIC at constant IB
( 6 ) Common Collector Configuration
Current amplification
factor
γ = dIE / dIB
Relation between α and γ
γ = 1 / ( 1 – α )
Collector current
IC = α IE
+ ICBO
= ( β + 1 )IB + ( β + 1 )ICBO
( 7 ) Operating Point
The zero signal values of
IC and VCE is known as operating point.
( 8 ) Transistor As An Amplifier
The common emitter
configuration is generally used in the transistor amplifier circuit
Current Gain
β = dIC / dIB
Voltage gain
AV = dVCE /
dVBE
= β × ( RAC / Ri
)
Where RAC
= RC ‖ Ri
= ( RC ) ( Ri
) / ( RC + Ri )
Ri = Input resistance
of next stage
RC = Collector current
( 9 ) Power Gain
AP = AV
× Ai
Where AP = Power gain
AV = Voltage gain
Ai = Current gain
( 10 ) Cut off , active
and saturation region
Cut off region
Emitter diode – OFF and Collector
diode – OFF
Active region
Emitter diode – ON and Collector
diode – OFF
Saturation region
Emitter diode – ON and Collector
diode – ON
( 11 ) Permissible Power
rating of transistor
P = Tjmax
– Tamb / θ
Where
P = Power
dissipated in the transistor
Tjmax
= Maximum junction temperature
Tamb = Ambient temperature
θ = Thermal
resistance in degree centigrade per watt
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